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Si4972DY
Vishay Siliconix
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ. a
Max.
Unit
Dynamic
a
Turn-On Delay Time
Rise Time
t d(on)
t r
Channel 1
V DD = 15 V, R L = 3 Ω
I D ? 5 A, V GEN = 10 V, R g = 1 Ω
Ch 1
Ch 2
Ch 1
Ch 2
12
10
55
60
18
15
83
90
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
t d(off)
t f
t d(on)
t r
t d(off)
t f
Channel 2
V DD = 15 V, R L = 3 Ω
I D ? 5 A, V GEN = 10 V, R g = 1 Ω
Channel 1
V DD = 15 V, R L = 3 Ω
I D ? 5 A, V GEN = 4.5 V, R g = 1 Ω
Channel 2
V DD = 15 V, R L = 3 Ω
I D ? 5 A, V GEN = 4.5 V, R g = 16 Ω
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
30
22
7
6
120
108
150
130
29
19
13
26
45
33
11
9
180
162
225
195
44
29
20
39
ns
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode
Current
Pulse Diode Forward Current a
I S
I SM
T C = 25 °C
Ch 1
Ch 2
Ch 1
Ch 2
2.5
2.1
20
20
A
Body Diode Voltage
Body Diode Reverse Recovery
Time
Body Diode Reverse Recovery
Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
V SD
t rr
Q rr
t a
t b
I S = 1.6 A
I S = 1.6 A
Channel 1
I F = 2 A, dI/dt = 100 A/μs, T J = 25 °C
Channel 2
I F = 2 A, dI/dt = 100 A/μs, T J = 25 °C
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
0.77
0.79
21
18
15
11
13
11
8
7
1.2
1.2
42
36
30
22
V
ns
nC
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 73849
S09-0138-Rev. D, 02-Feb-09
www.vishay.com
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